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cond-mat.mtrl-sci2012★ 101 cited
Monolithic growth of ultra-thin Ge nanowires on Si(001)
Jianjun Zhang, Georgios Katsaros, Francesco Montalenti +8
Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epit…
cond-mat.mtrl-sci2007
Sculpting the shape of semiconductor heteroepitaxial islands: from dots to rods
J. T. Robinson, D. A. Walko, D. A. Arms +7
In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape inc…