most citedInfluence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2

15 citations · 16 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2025

Tunable Luminescence From a Single Free-Base Porphyrin Molecule By Controlled Access to Optically Active States

Eve Ammerman, Nils Krane, Bruno Schuler

Scanning tunneling microscopy-induced luminescence (STML) provides access to the optical properties of individual molecules through a cascade of relaxation processes between many-b…

cond-mat.mtrl-sci2025

Atomically-resolved exciton emission from single defects in MoS

Lysander Huberich, Eve Ammerman, Gu Yu +11

Understanding how atomic defects shape the nanoscale optical properties of two-dimensional (2D) semiconductors is essential for advancing quantum technologies and optoelectronics.…

cond-mat.mtrl-sci2025

Layer-Dependent Interfacial Coupling and Exciton Pinning in WSe2/Graphene Heterostructures

Lan Huang, Laric Bobzien, Ángel Labordet Álvarez +7

Understanding interfacial interactions in two-dimensional heterostructures is crucial for their implementation in future optoelectronic and quantum technologies. Here, we investiga…

cond-mat.mes-hall2025

Atomic-scale imaging of graphene nanoribbons on graphene after polymer-free substrate transfer

Amogh Kinikar, Feifei Xiang, Lucia Palomino Ruiz +12

On-surface synthesis enables the fabrication of atomically precise graphene nanoribbons (GNRs) with properties defined by their shape and edge topology. While this bottom-up approa…

cond-mat.mes-hall2024★ 1 cited

Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe

Laric Bobzien, Jonas Allerbeck, Nils Krane +7

Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies…

cond-mat.mtrl-sci2024★ 15 cited

Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2

Kyle T. Munson, Riccardo Torsi, Fatimah Habis +8

Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here,…