20 citations · 23 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2026
STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)
Tatiana V. Pavlova, Vladimir M. Shevlyuga
The objective of miniaturizing doped areas in silicon, with the ultimate goal of achieving atomic-precision doping, requires a fundamental understanding of the dopant incorporation…
cond-mat.mtrl-sci2025★ 2 cited
Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state
T. V. Pavlova, V. M. Shevlyuga
Silicon dangling bonds (DBs) on an adsorbate-covered Si(100) surface can be created in a scanning tunneling microscope (STM) with high precision required for a number of applicatio…
cond-mat.mtrl-sci2025★ 1 cited
Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface
T. V. Pavlova, V. M. Shevlyuga
Dangling bonds (DBs) are common defects in silicon that affect its electronic performance by trapping carriers at the in-gap levels. For probing the electrical properties of indivi…