6 citations · 6 across the 4 of their papers we have counts for
5 papers
Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures
Zhendong Chi, Eoin Dolan, Haozhe Yang +4
Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in sp…
Measuring the magnetic anisotropy of the spin Hall effect and spin relaxation length in nickel and permalloy via electrical spin injection
Eoin Dolan, Jone Mencos, Williams Savero Torres +5
The spin Hall effect in ferromagnets is of great interest in the field of spintronics, and while the effect has been quantified in many materials, the dependence of the spin Hall a…
Gate tunable spin-charge interconversion in a graphene/ReS heterostructure up to room temperature
Eoin Dolan, Zhendong Chi, Haozhe Yang +2
Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin cur…
Orbital Hall conductivity and orbital diffusion length of Vanadium thin films by Hanle magnetoresistance
M. Xochitl Aguilar-Pujol, Isabel C. Arango, Eoin Dolan +4
In spintronics, the spin Hall effect has been widely used to generate and detect spin currents in materials with strong spin-orbit coupling such as Pt and Ta. Recently, its orbital…
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Haozhe Yang, Zhendong Chi, Garen Avedissian +7
Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance s…