activity
20022010
most citedIn situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

63 citations · 132 across the 7 of their papers we have counts for

collaborators

7 papers

quant-ph2010★ 29 cited

Photon Antibunching and Magnetospectroscopy of a Single Fluorine Donor in ZnSe

K. De Greve, S. M. Clark, D. Sleiter +6

We report on the optical investigation of single electron spins bound to fluorine donor impurities in ZnSe. Measurements of photon antibunching establish the presence of single, is…

quant-ph2009★ 3 cited

Indistinguishable photons from independent semiconductor single-photon devices

Kaoru Sanaka, Alexander Pawlis, Thaddeus Ladd +2

We demonstrate quantum interference between photons generated by the radiative decay processes of excitons that are bound to isolated fluorine donor impurities in ZnSe/ZnMgSe quant…

quant-ph2007★ 33 cited

Lasing of donor-bound excitons in ZnSe microdisks

A. Pawlis, M. Panfilova, D. J. As +4

Excitons bound to flourine atoms in ZnSe have the potential for several quantum optical applications. Examples include optically accessible quantum memories for quantum information…

cond-mat.mtrl-sci2007

MBE Growth of Cubic InN

J. Schoermann, D. J. As, K. Lischka

Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers co…

cond-mat.mtrl-sci2007★ 1 cited

Room temperature green light emissions from nonpolar cubic InGaN/GaN multi quantum wells

S. F. Li, J. Schoermann, D. J. As +1

Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum wel…

cond-mat.mtrl-sci2007★ 63 cited

In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

J. Schoermann, S. Potthast, D. J. As +1

Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively dete…