most citedIn situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

63 citations · 63 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci2007

MBE Growth of Cubic InN

J. Schoermann, D. J. As, K. Lischka

Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers co…

cond-mat.mtrl-sci2007★ 63 cited

In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

J. Schoermann, S. Potthast, D. J. As +1

Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively dete…