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Fully Spin-transparent magnetic interfaces enabled by insertion of a paramagnetic NiO layer
Lijun Zhu, Lujun Zhu, Robert Buhrman
Spin backflow and spin-memory loss have been well established to considerably lower the interfacial spin transmissivity of metallic magnetic interfaces and thus the energy efficien…
Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75
Lijun Zhu, Lujun Zhu, Shengjie Shi +2
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, an…
Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures
Graham E. Rowlands, Minh-Hai Nguyen, Sriharsha V. Aradhya +4
We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogen…
Cryogenic Memory Architecture Integrating Spin Hall Effect based Magnetic Memory and Superconductive Cryotron Devices
Minh-Hai Nguyen, Guilhem J. Ribeill, Martin Gustafsson +19
One of the most challenging obstacles to realizing exascale computing is minimizing the energy consumption of L2 cache, main memory, and interconnects to that memory. For promising…