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researcher

É. Bustarret

1 paper hereh-index 334.9k citations179 works total

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author position
  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1

identity via Semantic Scholar / OpenAlex

most citedStrain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

18 citations · 18 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2007★ 18 cited

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Julien Pernot, Etienne Bustarret, Mariusz Rudzinski +2

The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is inves…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.