activity
20042017
most citedDependence of the superconducting transition temperature on the doping level in single crystalline diamond films

206 citations · 486 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2017★ 49 cited

Non-adiabatic Kohn Anomaly in Heavily Boron-doped Diamond

Fabio Caruso, Moritz Hoesch, Philipp Achatz +4

We report evidence of a non-adiabatic Kohn anomaly in boron-doped diamond, using a joint theoretical and experimental analysis of the phonon dispersion relations. We demonstrate th…

cond-mat.supr-con2016★ 11 cited

Relaxation of the resistive superconducting state in boron-doped diamond films

A. Kardakova, A. Shishkin, A. Semenov +8

We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of…

cond-mat.mes-hall2011★ 62 cited

The Diamond SQUID

Soumen Mandal, Tobias Bautze, Oliver A. Williams +7

Diamond is an electrical insulator in its natural form. However, when doped with boron above a critical level (~0.25 at.%) it can be rendered superconducting at low temperatures wi…

cond-mat.mes-hall2010★ 39 cited

Nanostructures made from superconducting boron doped diamond

Soumen Mandal, Cécile Naud, Oliver A. Williams +6

We report on the transport properties of nanostructures made from boron-doped superconducting diamond. Starting from nanocrystalline superconducting boron-doped diamond thin films,…

cond-mat.supr-con2009★ 28 cited

Spatially-Correlated Microstructure and Superconductivity in Polycrystalline Boron-Doped Diamond

Franck Dahlem, Philipp Achatz, O. A. Williams +3

Scanning tunneling spectroscopies are performed below 100~mK on nano-crystalline boron-doped diamond films characterized by Transmission Electron Microscopy and transport measureme…

cond-mat.mtrl-sci2007★ 18 cited

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Julien Pernot, Etienne Bustarret, Mariusz Rudzinski +2

The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is inves…