18 citations · 35 across the 3 of their papers we have counts for
4 papers
Non volatile photo-switch using a diamond pn junction
Cédric Masante, Martin Kah, Clément Hébert +2
Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly developing areas of quantum communication, short wavelength optics, smart energ…
Potential barrier heights at metal on oxygen-terminated diamond interfaces
Pierre Muret, Aboulaye Traoré, Aurélien Maréchal +5
Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO\_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, c…
Oxygen vacancy and EC - 1 eV electron trap in ZnO
Gauthier Chicot, Pierre Muret, Julien Pernot +2
Fourier transform deep level transient spectroscopy has been performed between 80 K and 550 K in five n-type ZnO samples grown by different techniques. The capture cross section an…
Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates
Julien Pernot, Etienne Bustarret, Mariusz Rudzinski +2
The strain of GaN layers grown by Metal Organic Chemical Vapor Deposition (MOCVD) on three vicinal 4H-SiC substrates (0, 3.4 and 8 offcut from [0001] towards [11-20] axis) is inves…