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20072025
most citedNature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance

95 citations · 352 across the 19 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2025

Spin Reorientation Driven Renormalization of Spin-Phonon Coupling in FeGeTe

Riju Pal, Md. Nur Hasan, Chumki Nayak +9

Quasi-2D van der Waals ferromagnet FeGeTe, featuring the simultaneous presence of high Curie temperature ( K) and a spin-reorientation transition a…

cond-mat.mes-hall2024★ 11 cited

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Baisali Kundu, Priyanka Mondal, David Tebbe +9

Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenides (TMDs) heterostructures is central to advancing photonics and electronics on-chip…

cond-mat.mes-hall2020

Broken Inversion Symmetry and Interface-induced Spin-polarization for metal-Weyl semimetal stacked interfaces

Tuhin Kumar Maji, Kumar Vaibhav, Samir Kumar Pal +1

Weyl semimetal TaAs, a congenial host to the massless Weyl fermions, spontaneously lacks the time-reversal and the inversion symmetry and thus effectuates topologically stable Weyl…

cond-mat.mes-hall2018★ 58 cited

Designing hybrid graphene oxide- gold nanoparticles for nonlinear optical response: Experiment and theory

Rajesh Kumar Yadav, J. Aneesh, Rituraj Sharma +6

Nonlinear optical absorption of light by materials are weak due to its perturbative nature, although a strong nonlinear response is of crucial importance to applications in optical…

cond-mat.mes-hall2017★ 95 cited

Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance

Divya Somvanshi, Sangeeth Kallatt, Chenniappan Venkatesh +5

Monolayers of transition metal dichalcogenides (TMDCs) exhibit excellent electronic and optical properties. However, the performance of these two-dimensional (2D) devices are often…