3 papers
physics.app-ph2026
Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering
Hyowon W. Jeong, Aris Koulas-Simos, Imad Limame +6
GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scal…
physics.app-ph2026
Lasing from SOI-integrated GaAsSb nanowires via resonator-driven optical feedback
J. Zöllner, C. Doganlar, C. GarcÃa Marcilla +3
Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical impleme…
cond-mat.mtrl-sci2026
Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics
Pavel S. Avdienko, Lukas Hanschke, Quirin Buchinger +13
We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is…