3 papers
physics.app-ph2026
Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering
Hyowon W. Jeong, Aris Koulas-Simos, Imad Limame +6
GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scal…
cond-mat.mtrl-sci2025
Unveiling the growth mode diagram of GaSe on sapphire
M. Bissolo, M. Dembecki, J. Belz +10
The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technol…
physics.app-ph2024
Competing mechanisms of dominant radiative and Auger recombination in hot carrier generation in III-V semiconductor nanowires
Hamidreza Esmaielpour, Paul Schmiedeke, Nabi Isaev +4
One-dimensional structures such as nanowires (NWs) show great promise in tailoring the rates of hot carrier thermalization in semiconductors with important implications for the des…