8 papers
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
P. Aseev, Ž. GaÄeviÄ, J. M. Mánuel +4
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE)…
Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging
Piu Rajak, Mahabul Islam, J. J. Jiménez +7
InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB stacking semiconductor system, polarity is an important…
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
Sergio Fernández-Garrido, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growt…
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
S. Fernández-Garrido, J. Pereiro, F. González-Posada +4
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite InAlGaN (x 0.06, 0.02 < y < 0.27) layers grown by m…
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
S. Fernández-Garrido, A. Redondo-Cubero, R. Gago +7
Indium incorporation into wurtzite (0001)-oriented InAlGaN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temp…
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
G. Koblmüller, S. Fernández-Garrido, E. Calleja +1
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffracti…