4 papers
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
P. Aseev, Ž. GaÄeviÄ, J. M. Mánuel +4
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE)…
Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging
Piu Rajak, Mahabul Islam, J. J. Jiménez +7
InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB stacking semiconductor system, polarity is an important…
Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices
V. Braza, T. Ben, S. Flores +7
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar…
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
S. Fernández-Garrido, Ž. GaÄeviÄ, E. Calleja
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux an…