Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

B. C. Chapler, S. Mack, L. Ju +11

We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga${}_{1-x}$Mn${}_x$As or $x$=3.2$\times 10^{-4}$ Ga$_{1-x…