activity
20062019
most citedZ2Pack: Numerical Implementation of Hybrid Wannier Centers for Identifying Topological Materials

444 citations · 2.2k across the 30 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

13 papers · 1 filter

cond-mat.mes-hall2019★ 56 cited

Observation of Weyl nodes in robust type-II Weyl semimetal WP2

M. -Y. Yao, N. Xu, Q. Wu +9

Distinct to type-I Weyl semimetals (WSMs) that host quasiparticles described by the Weyl equation, the energy dispersion of quasiparticles in type-II WSMs violates Lorentz invarian…

cond-mat.mes-hall2018★ 8 cited

Electronic properties of one-dimensional nanostructures of the BiSe topological insulator

Naunidh Virk, Gabriel Autès, Oleg V. Yazyev

We theoretically study the electronic structure and spin properties of one-dimensional nanostructures of the prototypical bulk topological insulator BiSe. Realistic models…

cond-mat.mes-hall2017★ 43 cited

Distinct evolutions of Weyl fermion quasiparticles and Fermi arcs with bulk band topology in Weyl semimetals

N. Xu, G. Autes, C. E. Matt +14

The Weyl semimetal phase is a recently discovered topological quantum state of matter characterized by the presence of topologically protected degeneracies near the Fermi level. Th…

cond-mat.mes-hall2016

Localized electronic states at grain boundaries on the surface of graphene and graphite

Adina Luican-Mayer, Jose E. Barrios-Vargas, Jesper Toft Falkenberg +8

Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and es…

cond-mat.mes-hall2016★ 196 cited

Robust Type-II Weyl Semimetal Phase in Transition Metal Diphosphides XP (X = Mo, W)

G. Autès, D. Gresch, M. Troyer +2

The recently discovered type-II Weyl points appear at the boundary between electron and hole pockets. Type-II Weyl semimetals that host such points are predicted to exhibit a new t…

cond-mat.mes-hall2015★ 55 cited

Electromechanical Oscillations in Bilayer Graphene

Muhammed Malik Benameur, Fernando Gargiulo, Sajedeh Manzeli +4

Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials s…

cond-mat.mes-hall2014★ 35 cited

Electronic Transport in Graphene with Aggregated Hydrogen Adatoms

Fernando Gargiulo, Gabriel Autès, Naunidh Virk +5

Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization.…

cond-mat.mes-hall2014★ 36 cited

Strong out-of-plane magnetic anisotropy of Fe adatoms on BiTe

T. Eelbo, M. Waśniowska, M. Sikora +7

The electronic and magnetic properties of individual Fe atoms adsorbed on the surface of the topological insulator BiTe(111) are investigated. Scanning tunneling microscopy…

cond-mat.mes-hall2014★ 23 cited

Atomic and Electronic Structure of a Rashba - Junction at the BiTeI Surface

C. Tournier-Colletta, G. Autès, B. Kierren +6

The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creati…

cond-mat.mes-hall2013★ 18 cited

Engineering Quantum Spin Hall Effect in Graphene Nanoribbons via Edge Functionalization

Gabriel Autès, Oleg V. Yazyev

Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in grap…

cond-mat.mes-hall2012★ 7 cited

Controlling edge states in the Kane-Mele model via edge chirality

Gabriel Autès, Oleg V. Yazyev

We investigate the dependence of band dispersion of the quantum spin Hall effect (QSHE) edge states in the Kane-Mele model on crystallographic orientation of the edges. Band struct…

cond-mat.mes-hall2011★ 1 cited

New mechanism for generating spin transfer torque without charge current

G. Autès, J. Mathon, A. Umerski

A new physical mechanism for generating spin-transfer torque is proposed. It is due to interference of bias driven nonequilibrium electrons incident on a switching junction with th…

cond-mat.mes-hall2006★ 67 cited

Giant Anisotropic Magneto-Resistance in ferromagnetic atomic contacts

M. Viret, M. Gabureac, F. Ott +3

Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic R…