2 citations · 2 across the 4 of their papers we have counts for
4 papers
Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon
M. Gasseller, R. Loo, J. F. Harrison +3
Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the pro…
Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern
G. Brammertz, M. Caymax, Y. Mols +6
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from…
Selective epitaxial growth of GaAs on Ge by MOCVD
Guy Brammertz, Yves Mols, Stefan Degroote +4
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from…
Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
Guy Brammertz, Yves Mols, Stefan Degroote +4
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substra…