3 papers
cond-mat.mtrl-sci2007
Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern
G. Brammertz, M. Caymax, Y. Mols +6
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from…
cond-mat.mtrl-sci2007
Selective epitaxial growth of GaAs on Ge by MOCVD
Guy Brammertz, Yves Mols, Stefan Degroote +4
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from…
cond-mat.mtrl-sci2007
Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
Guy Brammertz, Yves Mols, Stefan Degroote +4
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substra…