TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data

Wesley Xi, Vikram Magendar, Alhaji A Sharka +1

In this paper, 65 nm n-type Metal-Oxide-Semiconductor Field-Effect-Transistors (nMOSFETs) are taped out and measured at 292 K to 4.5 K. Technology Computer-Aided-Design (TCAD) mode…