most citedBismuth surfactant-enhanced III-As epitaxy on GaAs(111)A

9 citations · 9 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2023★ 9 cited

Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A

Ahmed M. Hassanen, Jesus Herranz, Lutz Geelhaar +1

Quantum dot (QD) growth on high () symmetry GaAs{111} surfaces holds promise for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs{111} surfaces suffer…