Chinkyo Kim

collaborators

3 papers

cond-mat.mtrl-sci2025

Controlling GaN nucleation via O $_{2}$ -plasma-perforated graphene masks on c-plane sapphire

Su Young An, Chinkyo Kim

Atomically thin, perforated graphene on $c$ -plane sapphire functions as a nanoscale mask that enables GaN growth through thru-holes. We tune the perforated-area fraction $f_{p}$ by c…

cond-mat.mtrl-sci2025

Scalable thru-hole epitaxy of GaN through self-adjusting $h$ -BN masks via solution-processed 2D stacks

Jongwoo Ha, Minah Choi, Jieun Yang +1

Selective epitaxy on 2D-material masks is a promising pathway for achieving localized, defect-suppressed GaN growth, but conventional 2D transfer processes limit scalability and in…

cond-mat.mtrl-sci2025

TBA-enabled spin-coating of a percolatively connected GO nanosieve for thru-hole epitaxy: tuning GO flake stacking and coverage to control GaN nucleation

Gunhoon Beak, Changwook Dong, Minah Choi +3

We report a spin-coating-based approach for forming a percolatively connected graphene oxide (GO) nanosieve on SiO $_{2}$ -patterned sapphire substrates, where the addition of tetrabut…

Controlling GaN nucleation via O2​-plasma-perforated graphene masks on c-plane sapphire

Scalable thru-hole epitaxy of GaN through self-adjusting h-BN masks via solution-processed 2D stacks

TBA-enabled spin-coating of a percolatively connected GO nanosieve for thru-hole epitaxy: tuning GO flake stacking and coverage to control GaN nucleation

Controlling GaN nucleation via O $_{2}$ -plasma-perforated graphene masks on c-plane sapphire

Scalable thru-hole epitaxy of GaN through self-adjusting $h$ -BN masks via solution-processed 2D stacks