Lingyu Meng

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physics.app-ph2025

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $I^^{2}$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu +6

This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al $_{2}$ O $_{3}$ dielectrics on (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ and $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ )$_…

Electrical and Structural Properties of In-Situ MOCVD Grown Al2​O3​/I^2-Ga2​O3​ and Al2​O3​/I^2-(Alx​Ga1−x​)2​O3​ MOSCAPs

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $I^^{2}$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs