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cond-mat.mtrl-sci2010
Theoretical study of current density for InN and GaN-based Gunn diode operating in transit-time mode
M O Islam, M G Hassan, M R Islam +2
We are the first to report the frequency response and corresponding current density of a wurtzite phase Indium Nitride (InN)-based vertical configuration Gunn diode at 1 μm active…
cond-mat.mtrl-sci2007
Determination of InN-GaN heterostructure band offsets from internal photoemission measurements
Zahid Hasan Mahmood, A. P. Shah, Abdul Kadir +4
Band discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent…