R. Culbertson

most citedEvidence for a narrow dip structure at 1.9 GeV/c

^{2}

3 π^{+} 3 π^{-}

diffractive photoproduction

48 citations · 48 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2007

Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn $_{x}$ Si $_{1 - x}$ ) across the metal-insulator transition

Li Zeng, E. Helgren, R. Islam +4

The magnetic and electrical transport properties of Mn-doped amorphous silicon (\textit{a-}Mn $_{x}$ Si $_{1 - x}$ ) thin films have been measured. The magnetic susceptibility obeys the…

hep-ex2001★ 48 cited

Evidence for a narrow dip structure at 1.9 GeV/c $^{2}$ in $3 π^{+} 3 π^{-}$ diffractive photoproduction

E687 Collaboration, P. L. Frabetti

A narrow dip structure has been observed at 1.9 GeV/c $^{2}$ in a study of diffractive photoproduction of the $3 π^{+} 3 π^{-}$ final state performed by the Fermilab experiment E687.

Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mnx​Si1−x​) across the metal-insulator transition

Evidence for a narrow dip structure at 1.9 GeV/c2 in 3π+3π− diffractive photoproduction

Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn $_{x}$ Si $_{1 - x}$ ) across the metal-insulator transition

Evidence for a narrow dip structure at 1.9 GeV/c $^{2}$ in $3 π^{+} 3 π^{-}$ diffractive photoproduction