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most citedImpurity effect on weak anti-localization in the topological insulator Bi2Te3

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physics.app-ph2018★ 49 cited

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

Qin Zhou, Honglei Wu, Hui Li +9

An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features…