activity
20072017
most citedA first-principles study of carbon-related energy levels in GaN. Part I - complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies

104 citations · 279 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2017★ 53 cited

A first-principles study of carbon-related energy levels in GaN: Part II - Complexes formed by carbon and hydrogen, silicon or oxygen

Masahiko Matsubara, Enrico Bellotti

This work presents an in-depth investigation of the properties of complexes composed of hydrogen, silicon or oxygen with carbon, which are major unintentional impurities in undoped…

cond-mat.mtrl-sci2017★ 28 cited

Doping anatase TiO2 with group V-b and VI-b transition metal atoms: a hybrid functional first-principles study

Masahiko Matsubara, Rolando Saniz, Bart Partoens +1

We investigate the role of transition metal atoms of group V-b (V, Nb, and Ta) and VI-b (Cr, Mo, and W) as n- or p-type dopants in anatase TiO2 using thermodynamic principles and d…

cond-mat.mtrl-sci2015★ 104 cited

A first-principles study of carbon-related energy levels in GaN. Part I - complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies

Masahiko Matsubara, Enrico Bellotti

Various forms of carbon based complexes in GaN are studied with first-principles calculations employing Heyd-Scuseria-Ernzerhof hybrid functional within the framework of density fu…

cond-mat.mes-hall2013★ 6 cited

Comment on "Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop" [Phys. Rev. Lett. 110, 177406 (2013)]

Francesco Bertazzi, Michele Goano, Xiangyu Zhou +4

In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a spectroscopic study of the electrons emitted from the GaN p-cap of a forward-biased InGaN/GaN light-emitting…

cond-mat.mtrl-sci2012★ 11 cited

Attracting shallow donors: Hydrogen passivation in (Al,Ga,In)-doped ZnO

Masahiko Matsubara, Mozhgan N. Amini, Rolando Saniz +2

The hydrogen interstitial and the substitutional Al_Zn, Ga_Zn and In_Zn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel…

nucl-ex2007★ 77 cited

On the extraction of weak transition strengths via the (3He,t) reaction at 420 MeV

R. G. T Zegers, T. Adachi, H. Akimune +32

Differential cross sections for transitions of known weak strength were measured with the (3He,t) reaction at 420 MeV on targets of 12C, 13C, 18O, 26Mg, 58Ni, 60Ni, 90Zr, 118Sn, 12…