activity
20222026
most citedTunable Electron Transport in Defect-Engineered PdSe

14 citations · 32 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2026

Percolative Instabilities and Sparse-Limit Fractality in 1T-TaS

Poulomi Maji, Md Aquib Molla, Koushik Dey +13

The low-temperature metallic phase of 1T-TaS2 may originate from current- and voltage-driven destabilization of the commensurate charge density wave (CDW) in a strongly correlated…

cond-mat.mtrl-sci2025★ 1 cited

Dimensional crossover and emergence of novel phases in puckered PdSe under pressure

Tanima Kundu, Soumik Das, Koushik Dey +6

We investigate the pressure-driven structural and electronic evolution of PdSe\(_2\) using powder X-ray diffraction, Raman spectroscopy, and first-principles calculations. Beyond 2…

cond-mat.mes-hall2024

Magnon-Phonon Coupling in Layered Antiferromagnet

Somsubhra Ghosh, Mainak Palit, Sujan Maity +1

We present a fully analytical model of hybridization between magnon, and phonons observed experimentally in magneto-Raman scattering in van der Waals (vdW) antiferromagnets (AFM).…

cond-mat.mes-hall2024

Tailored 1D/2D Van der Waals Heterostructures for Unified Analog and Digital Electronics

Bipul Karmakar, Bikash Das, Shibnath Mandal +8

We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS (2D), on a single S…

cond-mat.mes-hall2024

Electron-Magnon Coupling Mediated Magnetotransport in Antiferromagnetic van der Waals Heterostructure

Sujan Maity, Soumik Das, Mainak Palit +7

Electron-magnon coupling reveals key insights into the interfacial properties between non-magnetic metals and magnetic insulators, influencing charge transport and spin dynamics. H…

cond-mat.mes-hall2024★ 4 cited

In-Plane Anisotropy-Driven Directional Charge Transport in van der Waals p-n Heterojunction

Rahul Paramanik, Tanima Kundu, Soumik Das +8

Low-symmetry two-dimensional (2D) van der Waals (vdW) materials enable anisotropic charge transport, crucial for polarization-sensitive optoelectronics. In this study, a -GeS/$n…

cond-mat.str-el2023

Raman signatures of lattice dynamics across inversion symmetry breaking phase transition in quasi-1D compound, (TaSe)I

Arnab Bera, Partha Sarathi Rana, Suman Kalyan Pradhan +9

Structural phase transition can occur due to complex mechanisms other than simple dynamical instability, especially when the parent and daughter structure is of low dimension. This…

cond-mat.mtrl-sci2023

Emergence of a Non-van der Waals Magnetic Phase in a van der Waals Ferromagnet

Bikash Das, Subrata Ghosh, Shamashis Sengupta +12

Manipulation of long-range order in two-dimensional (2D) van der Waals (vdW) magnetic materials (e.g., CrI, CrSiTe etc.), exfoliated in few-atomic layer, can be achieved vi…

cond-mat.mes-hall2023

Pressure induced insulator-to-metal transition in few-layer FePS at 1.5 GPa

Bidyut Mallick, Mainak Palit, Rajkumar Jana +9

In two-dimensional (2D) van der Waals (vdW) layered materials the application of pressure often induces a giant lattice collapse, which can subsequently drive an associated Mott tr…

cond-mat.mes-hall2023★ 14 cited

Tunable Electron Transport in Defect-Engineered PdSe

Tanima Kundu, Barnik Pal, Bikash Das +8

Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present t…

cond-mat.mes-hall2022★ 8 cited

Manipulating Spin-Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure Interface Engineering

Sujan Maity, Dibyendu Dey, Anudeepa Ghosh +13

Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin…

cond-mat.mes-hall2022★ 5 cited

Ultrahigh breakdown current density of van der Waals One Dimensional

Bikash Das, Kapildeb Dolui, Rahul Paramanik +5

One-dimensional (1D) van der Waals (vdW) materials offer nearly defect-free strands as channel material in the field-effect transistor (FET) devices and probably, a better intercon…