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Rong Zhang

3 papers hereh-index 12661 citations110 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • physics.optics2
  • cond-mat.mtrl-sci1
same name
  • Rong Zhang — 19 papers, h 13
  • Rong Zhang — 16 papers, h 51
  • Rong Zhang — 9 papers, h 8
  • Rong Zhang — 8 papers, h 12
  • Rong Zhang — 6 papers, h 33
  • Rong Zhang — 6 papers, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedEnhanced optical performance of GaN Micro-light-emitting diodes with a single porous layer

1 citations · 1 across the 3 of their papers we have counts for

collaborators

3 papers

physics.optics2024★ 1 cited

Enhanced optical performance of GaN Micro-light-emitting diodes with a single porous layer

Ziwen Yan, Xianfei Zhang, Yuyin Li +8

High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometer…

physics.optics2024

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity

Peng Chen, Zili Xie, Xiangqian Xiu +6

III-V nitride semiconductors, represented by GaN, have attracted significant research attention. Driven by the growing interest in smart micro-displays, there is a strong desire to…

cond-mat.mtrl-sci2022

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure

Ru Xu, Peng Chen, Jing Zhou +9

In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a do…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.