294 citations · 1.2k across the 43 of their papers we have counts for
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Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals
Rujun Sun, Yu Kee Ooi, Arkka Bhattacharyya +4
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionall…
Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence
Rujun Sun, Yu Kee Ooi, Praneeth Ranga +3
In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor…
Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski +5
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is re…
On the origin of red luminescence from iron-doped beta-Ga2O3 bulk crystals
Rujun Sun, Yu Kee Ooi, Peter T. Dickens +2
Currently, Fe doping in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features…
Schottky Barrier Height Engineering In -GaO Using SiO Interlayer Dielectric
Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh +4
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of -GaO by insertion of an ultra-thin SiO dielectric interlaye…