2 papers
physics.optics2024
Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light Emitting Diodes
Yuyin Li, Jing Zhou, Ziwen Yan +10
We fabricated polygonal nanoholes in the top p-GaN layer of the InGaN/GaN light-emitting diode, followed by the deposition of Au/Al metal thin film within the nanoholes to create m…
physics.optics2024
Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
Peng Chen, Zili Xie, Xiangqian Xiu +6
III-V nitride semiconductors, represented by GaN, have attracted significant research attention. Driven by the growing interest in smart micro-displays, there is a strong desire to…