activity
20072023
most citedEngineering Silicon Nanocrystals: Theoretical study of the effect of Codoping with Boron and Phosphorus

88 citations · 291 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2023★ 1 cited

Structures and Electronic States of Nickel Rich Oxides for Lithium Ion Batteries

Saleem Yousuf, Md Maruf Mridha, Rita Magri

A new superstructure of layered pristine LiNiO2 (LNO) was obtained optimizing a large supercell of the 166 space group, the one observed experimentally by XRD, and relaxing both ce…

cond-mat.mtrl-sci2019★ 2 cited

Attractive interactions between like-oriented surface steps from an ab initio perspective: Role of the elastic and electrostatic contributions

Giulia Righi, Anna Franchini, Rita Magri

At low temperatures the interactions between like-oriented steps on a surface are believed to be dominated by elastic repulsions. This belief is based on the results of the classic…

cond-mat.mes-hall2018

Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires

Claudia Lange dos Santos, Paulo Piquini, Rita Magri

In this paper we show how to link the electronic structures of two III-V systems, one a direct gap material, GaAs, and the other an indirect gap material, GaP, from their bulks rig…

cond-mat.mtrl-sci2010★ 62 cited

Silicon Nanocrystallites in SiO2 Matrix: The Role of Disorder and Size

Roberto Guerra, Ivan Marri, Rita Magri +4

We compare, through first-principles pseudopotential calculations, the structural, electronic and optical properties of different size silicon nanoclusters embedded in a SiO2 cryst…

cond-mat.mtrl-sci2008★ 15 cited

Adsorption of Indium on a InAs wetting layer deposited on the GaAs(001) surface

Marcello Rosini, Rita Magri, Peter Kratzer

In this work we perform a first-principles study of the adsorption properties of an In adatom deposited on 1.75 monolayers (ML) InAs, forming a wetting layer on GaAs with th…

cond-mat.mtrl-sci2007★ 62 cited

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Ming Gong, Kaimin Duan, Chuan-Feng Li +3

We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare them to those of the InAs/GaAs QDs. We show that even tho…