762 citations · 9.6k across the 119 of their papers we have counts for
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Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions
Jianting Dong, Xinlu Li, Gautam Gurung +5
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magneti…
Oxide two-dimensional electron gas with high mobility at room-temperature
Kitae Eom, Hanjong Paik, Jinsol Seo +6
The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particular…
In-plane quasi-single-domain BaTiO via interfacial symmetry engineering
J. W. Lee, K. Eom, T. R. Paudel +18
The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabric…
Intrinsic ferroelectricity in Y-doped HfO2 thin films
Yu Yun, Pratyush Buragohain, Ming Li +10
Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the n…
Transport Spin Polarization of Noncollinear Antiferromagnetic Antiperovskites
Gautam Gurung, Ding-Fu Shao, Evgeny Y. Tsymbal
Spin-polarized currents play a key role in spintronics. Recently, it has been found that antiferromagnets with a non-spin-degenerate band structure can efficiently spin-polarize el…
Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect
Shuai Hu, Ding-Fu Shao, Huanglin Yang +6
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inef…