activity
20222026
most citedGeSn Defects and their Impact on Optoelectronic Properties: A Review

39 citations · 79 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2026

Combining physical models with dynamically acquired experimental information for the optimization of multicomponent NASICON fast ionic conductors in a self-driving laboratory

Bernardus Rendy, Yuxing Fei, Tanjin He +9

Elemental substitution within existing structural frameworks is a widely applied strategy for developing advanced materials. Yet, optimizing target properties while maintaining pha…

cond-mat.mtrl-sci2025★ 1 cited

Synthetic accessibility and sodium ion conductivity of the NaAPO (NAP) high-temperature sodium superionic conductor framework

Lauren N. Walters, Yuxing Fei, Bernardus Rendy +13

Advancement of solid state electrolytes (SSEs) for all solid state batteries typically focuses on modification of a parent structural framework for improved conductivity, \textit{e…

physics.app-ph2023★ 39 cited

GeSn Defects and their Impact on Optoelectronic Properties: A Review

Andrea Giunto, Anna Fontcuberta i Morral

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the mid-infrared, with the potential of replacing expensive III-V technology for monolithic on-ch…

cond-mat.mtrl-sci2022★ 34 cited

Understanding the growth mechanism of BaZrS chalcogenide perovskite thin films from sulfurized oxide precursors

Santhanu Panikar Ramanandan, Andrea Giunto, Elias Z. Stutz +8

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Re…

cond-mat.mtrl-sci2022★ 5 cited

Surfactant behavior and limited incorporation of Indium during in-situ doping of GeSn grown by MBE

Andrea Giunto, Louise Emma Webb, Thomas Hagger +1

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved pr…