12 citations · 38 across the 9 of their papers we have counts for
10 papers
Valley transitions during spin shuttling in Si/SiGe heterostructures
Jonas R F Lima, Guido Burkard
Valley excitations are considered one of the biggest challenges for a coherent spin shuttling in Si/SiGe heterostructures. In this work we theoretically investigate the valley dyna…
Heavy-Hole--Light-Hole Mixing and Spin--Photon Coupling in Germanium Flopping-Mode Qubits
Jose Reina-Gálvez, Guido Burkard
Intrinsic spin--orbit interaction in germanium provides electrically active flopping-mode qubits without requiring magnetic-field gradients to generate spin--charge hybridization.…
Strain-enabled control of the vanadium qudit in silicon carbide
Philipp Koller, Thomas Astner, Benedikt Tissot +2
Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semic…
Entanglement generation using single-photon pulse reflection in realistic networks
Ferdinand Omlor, Benedikt Tissot, Guido Burkard
A general entanglement generation protocol between remote stationary qubits using single-photon reflection in a photonic network is explored theoretically. The nodes of the network…
Partial Landau-Zener transitions and applications to qubit shuttling
Jonas R. F. Lima, Guido Burkard
The transition dynamics of two-state systems with time-dependent energy levels, first considered by Landau, Zener, Majorana, and Stückelberg, is one of the basic models in quantum…
Extended spin relaxation times of optically addressed telecom defects in silicon carbide
Jonghoon Ahn, Christina Wicker, Nolan Bitner +7
Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived…
Quantum communication networks with defects in silicon carbide
Philipp Sohr, Philipp Koller, Sebastian Ecker +23
Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…
Strain Engineering for Transition Metal Defects in SiC
Benedikt Tissot, Péter Udvarhelyi, Adam Gali +1
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optica…
Valley splitting depending on the size and location of a silicon quantum dot
Jonas R. F. Lima, Guido Burkard
The valley splitting (VS) of a silicon quantum dot plays an important role for the performance and scalability of silicon spin qubits. In this work we investigate the VS of a SiGe/…
Multiband theory for hexagonal germanium
Yetkin Pulcu, János Koltai, Andor Kormányos +1
The direct bandgap found in hexagonal germanium and some of its alloys with silicon allows for an optically active material within the group-IV semiconductor family with various po…