The coupling of polarization and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 thin films enables electrically controlled thermal memories above room temperature

Didac Barneo, Rafael Ramos, Hugo Romero +5

Here we investigate epitaxial Hf0.5Zr0.5O2 ferroelectric thin films as potential candidates to be used as non-volatile electric-field-modulated thermal memories. The electric-field…