31 citations · 54 across the 7 of their papers we have counts for
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Itinerant versus localized magnetism in spin gapped metallic half-Heusler compounds: Stoner criterion and magnetic interactions
E. Sasıoglu, W. Beida, S. Ghosh +6
Spin gapped metals have recently emerged as promising candidates for spintronic and nanoelectronic applications, enabling functionalities such as sub-60mV/dec switching, negative d…
Correlation effects in two-dimensional MX_2 and MA_2Z_4 (M= Nb, Ta; X= S, Se, Te; A=Si, Ge; Z=N, P) cold metals: Implications for device applications
W. Beida, E. Sasioglu, M. Tas +4
Cold metals, characterized by their distinctive band structures, hold promise for innovative electronic devices such as tunnel diodes with negative differential resistance (NDR) ef…
Multifunctional steep-slope spintronic transistors with spin-gapless-semiconductor or spin-gapped-metal electrodes
Ersoy Şaşıoğlu, Paul Bodewei, Nicki F. Hinsche +1
Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel…
Spin gapped metals: A novel class of materials for multifunctional spintronic devices
E. Sasioglu, M. Tas, S. Ghosh +4
Gapped metals, a recently proposed class of materials, possess a band gap slightly above or below the Fermi level, behaving as intrinsic p- or n-type semiconductors without requiri…
Nonconventional screening of Coulomb interaction in two-dimensional semiconductors and metals: A comprehensive cRPA study of MX2 (M=Mo, W, Nb, Ta; X=S, Se, Te)
Hamid Reza Ramezani, Ersoy Sasioglu, Hanif Hadipour +4
Experimental observations of large exciton binding energies and non-hydrogenic Rydberg series in 2D semiconducting TMDs, along with deviations in plasmon dispersion in 2D metallic…
Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSiN/HfSiN/NbSiN lateral heterojunction diode
P. Bodewei, E. Şaşıoğlu, N. F. Hinsche +1
Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transi…