12 citations · 17 across the 10 of their papers we have counts for
10 papers
Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering
Hao Xiong, Huazhang Zhang, Liang Shu +16
Antiferroelectrics exhibit reversible antipolar-polar transformations, offering a compelling platform for multiple functionalities in modern nanoelectronics, yet deterministic cont…
Unlocking Cryogenic Energy Storage by Constructing Dipole Glass with Unit-cell-level Polar Disorder
Yangyang Si, Denan Li, Yijie Li +21
Cryogenic energy storage is vital for frontier technologies including deep-space exploration and quantum computing, yet conventional electrochemical energy systems fail below ~230…
Topological spin-texture transitions in van der Waals magnets revealed by X-ray Fourier transform holography
Sourav Chowdhury, Soumyaranjan Dash, Michael Schneider +14
Nontrivial topological spin-textures, such as skyrmions, merons, bimerons, and skyrmioniums, are envisioned as robust building blocks for future memory and logic devices. Controlla…
Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2
Baichen Lin, Shanquan Chen, Yubo Zhang +18
Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is oft…
Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films
Chao Zhou, Sizhe Huang, Yangyang Si +10
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memo…
Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films
Yangyang Si, Ningbo Fan, Yongqi Dong +13
Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in…
Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
Chao Zhou, Yanpeng Feng, Liyang Ma +10
Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has bee…
Large Enhancement of Properties in Strained Lead-free Multiferroic Solid Solutions with Strong Deviation from Vegard's Law
Tao Wang, Mingjie Zou, Dehe Zhang +18
Efforts to combine the advantages of multiple systems to enhance functionlities through solid solution design present a great challenge due to the constraint imposed by the classic…
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
Chao Zhou, Liyang Ma, Yanpeng Feng +13
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polariza…
Antiferroelectric Oxide Thin-Films: Fundamentals, Properties, and Applications
Yangyang Si, Tianfu Zhang, Chenhan Liu +5
Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation,…