120 citations · 316 across the 8 of their papers we have counts for
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cond-mat.mtrl-sci2024★ 17 cited
Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia
Tianyuan Zhu, Liyang Ma, Xu Duan +1
Hafnia-based ferroelectrics hold promise for nonvolatile ferroelectric memory devices. However, the high coercive field required for polarization switching remains a prime obstacle…
cond-mat.mtrl-sci2024★ 65 cited
Progress in Computational Understanding of Ferroelectric Mechanisms in HfO
Tianyuan Zhu, Liyang Ma, Shiqing Deng +1
Since the first report of ferroelectricity in nanoscale HfO-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and…
cond-mat.mtrl-sci2024★ 2 cited
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
Chao Zhou, Liyang Ma, Yanpeng Feng +13
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polariza…