65 citations · 67 across the 3 of their papers we have counts for
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Enhancing ferroelectric stability: Wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices
Jingxuan Li, Shiqing Deng, Liyang Ma +12
The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industria…
Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
Chao Zhou, Yanpeng Feng, Liyang Ma +10
Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has bee…
Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia
Tianyuan Zhu, Liyang Ma, Xu Duan +1
Hafnia-based ferroelectrics hold promise for nonvolatile ferroelectric memory devices. However, the high coercive field required for polarization switching remains a prime obstacle…
Progress in Computational Understanding of Ferroelectric Mechanisms in HfO
Tianyuan Zhu, Liyang Ma, Shiqing Deng +1
Since the first report of ferroelectricity in nanoscale HfO-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and…
Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping
Chao Zhou, Liyang Ma, Yanpeng Feng +13
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polariza…