12 citations · 20 across the 4 of their papers we have counts for
4 papers
Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
Jingrui Ma, Yuan Kang, Rui Wu +11
Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior…
Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping
Guo-Quan Qin, Fang-Ming Jing, Tian-Yue Hao +5
We demonstrate a switchable electron shell structure in a bilayer graphene quantum dot by manipulating the trigonal warping effect upon electrical gating. Under a small perpendicul…
Revealing spin-flip two-level systems using ultra-thin film superconducting resonators
Zi-Qing Huang, Shu-Kun Ye, Yong-Qiang Xu +8
Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tun…
Coupling of hole double quantum dot in planar germanium to a microwave cavity
Yuan Kang, Zong-Hu Li, Zhen-Zhen Kong +10
In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approa…