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Ignacio Figueruelo-Campanero

3 papers hereh-index 317 citations6 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2
  • middle author1

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • cond-mat.str-el1
  • cond-mat.supr-con1

identity via Semantic Scholar / OpenAlex

most citedMott resistive switching initiated by topological defects

7 citations · 7 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2025

Influence of carrier density and disorder on the Quantum Hall plateau widths in epitaxial graphene

Ignacio Figueruelo-Campanero, Yuriko Baba, Alejandro Jimeno-Pozo +9

Since its discovery, graphene has been one of the most prominent 2D materials due to its unique properties and broad range of possible applications. In particular, the half-integer…

cond-mat.supr-con2024

Apparent color and Raman vibrational modes of the unconventional superconductor Bi2​Sr2​CaCu2​O8+δ​ exfoliated flakes

Ignacio Figueruelo-Campanero, Adolfo del Campo, Gladys Nieva +3

Studying and controlling the properties of individual exfoliated materials is one of the first steps towards the fabrication of complex van der Waals systems. However, prolonged ex…

cond-mat.str-el2024★ 7 cited

Mott resistive switching initiated by topological defects

Alessandra Milloch, Ignacio Figueruelo-Campanero, Wei-Fan Hsu +11

Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Desp…

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