6 citations · 6 across the 4 of their papers we have counts for
5 papers
Edge-Dependent Step-Flow Growth Mechanism in -GaO (100) Facet at the Atomic Level
Qi Li, Junlei Zhao, Na Lin +5
Homoepitaxial step-flow growth of high-quality -GaO thin films is essential for the advancement of high-performance GaO-based devices. In this work, the…
Orientation-dependent surface radiation damage in -Ga2O3 explored by multiscale atomic simulations
Taiqiao Liu, Zeyuan Li, Junlei Zhao +7
Ultrawide bandgap semiconductor -Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is u…
RESURF GaO-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage
Junting Chen, Junlei Zhao, Jin Wei +1
Heterosubstrates have been extensively studied as a method to improve the heat dissipation of GaO devices. In this simulation work, we propose a novel role for -type…
Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide
Junlei Zhao, Javier García Fernández, Alexander Azarov +6
Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range perio…
Orientation-Dependent Atomic-Scale Mechanism of - Thin Film Epitaxial Growth
Jun Zhang, Junlei Zhao, Junting Chen +1
- has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the -$\mathrm…