activity
20232026
most citedFabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing

9 citations · 28 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026★ 1 cited

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Katie M. Eggleton, Joseph K. Cannon, Sam G. Bishop +5

The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium…

quant-ph2025★ 1 cited

Tunable multi-photon correlations from a coherently driven quantum dot

Thomas K. Bracht, Rachel N. Clark, Petros Androvitsaneas +7

Mixing the fields generated by different light sources has emerged as a powerful approach for engineering non-Gaussian quantum states. Understanding and controlling the resulting p…

physics.app-ph2025★ 6 cited

Tracking the creation of single photon emitters in AlN by implantation and annealing

H. B. Yağcı, E. Nieto Hernández, J. K. Cannon +6

In this study, we inspect and analyze the effect of Al implantation into AlN by conducting confocal microscopy on the ion implanted regions, before and after implantation, followed…

quant-ph2024★ 3 cited

Measuring photon correlation using imperfect detectors

Rachel N. Clark, Sam G. Bishop, Joseph K. Cannon +4

Single-photon detectors are ``blind" after the detection of a photon, and thereafter display a characteristic recovery in efficiency, during which the number of undetected photons…

physics.app-ph2023★ 9 cited

Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing

E. Nieto Hernández, H. B. Yağcı, V. Pugliese +8

Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III-…

physics.optics2023★ 8 cited

Photo-dynamics of quantum emitters in aluminum nitride

Yanzhao Guo, John P. Hadden, Rachel N. Clark +2

Aluminum nitride is a technologically important wide bandgap semiconductor which has been shown to host bright quantum emitters. In this paper, we probe the photodynamics of quantu…