14 citations · 17 across the 5 of their papers we have counts for
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cond-mat.mes-hall2023★ 3 cited
Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Collin C. D. Frink, Talise Oh, E. S. Joseph +5
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced p…
cond-mat.mes-hall2023★ 14 cited
Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph +4
Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails…