5 papers
Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces
Ting Cui, Ying Zhou, Qianying Wang +12
Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interf…
Ferroelectricity in undoped HfO2 down to one-unit-cell on Si substrate
Tiantian Wang, He Zhang, Yongjie Xie +12
Hafnium oxide (HfO2), particularly at low-dimensional scales, exhibits extensive promising applications in ultrahigh density devices like low-power logic and non-volatile memory de…
The re-entrant ferromagnetism due to symmetric exchange bias in two septuple-layer MnBi2Te4 epitaxial films
Dezhi Song, Fuyang Huang, Gang Yao +10
MnBi2Te4 (MBT) is a typical magnetic topological insulator with an A-type antiferromagnetic (AFM) ground state. Here we prepared ultra-thin MBT films with controlled anti-site defe…
Confined Magnetization at the Sublattice-Matched Ruthenium Oxide Heterointerface
Yiyan Fan, Qinghua Zhang, Ting Lin +17
Creating a heterostructure by combining two magnetically and structurally distinct ruthenium oxides is a crucial approach for investigating their emergent magnetic states and inter…
Ultralarge polarization in ferroelectric hafnia-based thin films
Han Wu, Kun Lin, Qinghua Zhang +15
Hafnia-based ferroelectrics have become a valuable class of electronic functional materials at the nanoscale, showing great potential for next-generation memory and logic devices.…