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cond-mat.mtrl-sci2026
Breaking the mutual exclusivity between metallicity and ferroelectricity in a non-polar covalent semiconductor via orbital selective doping
Hui Li, Yunfan Yang, Junquan Huang +18
The mutual exclusion of ferroelectricity and metallic conductivity is a long-standing tenet because itinerant electrons screen long-range Coulomb forces that stabilize the bulk pol…
cond-mat.mtrl-sci2025
Ferroelectricity in undoped HfO2 down to one-unit-cell on Si substrate
Tiantian Wang, He Zhang, Yongjie Xie +12
Hafnium oxide (HfO2), particularly at low-dimensional scales, exhibits extensive promising applications in ultrahigh density devices like low-power logic and non-volatile memory de…