D. Slone

most citedExtraction of Secrets from 40nm CMOS Gate Dielectric Breakdown Antifuses by FIB Passive Voltage Contrast

1 citations · 1 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.supr-con2026

Tripling of the Superconducting Critical Current Density in BaFe $_{2}$ (As $_{1 - x}$ P $_{x}$ ) $_{2}$ Retained After Pressure Release

Jiangteng Liu, Alex Lopez, Daniel Slone +5

Superconducting performance is tunable not only via chemical modification or defect engineering, but also through external parameters such as pressure, though this method remains l…

cs.CR2025★ 1 cited

Extraction of Secrets from 40nm CMOS Gate Dielectric Breakdown Antifuses by FIB Passive Voltage Contrast

Andrew D. Zonenberg, Antony Moor, Daniel Slone +2

CMOS one-time-programmable (OTP) memories based on antifuses are widely used for storing small amounts of data (such as serial numbers, keys, and factory trimming) in integrated ci…

Tripling of the Superconducting Critical Current Density in BaFe2​(As1−x​Px​)2​ Retained After Pressure Release

Extraction of Secrets from 40nm CMOS Gate Dielectric Breakdown Antifuses by FIB Passive Voltage Contrast

Tripling of the Superconducting Critical Current Density in BaFe $_{2}$ (As $_{1 - x}$ P $_{x}$ ) $_{2}$ Retained After Pressure Release