activity
20132026
most citedSelective control of edge-channel trajectories by scanning gate microscopy

33 citations · 73 across the 12 of their papers we have counts for

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Showing 2025Show all

6 papers · 1 filter

cond-mat.supr-con2025

Intrinsic and Tunable Superconducting Diode Effect in Quantum Spin Hall Systems

Samuele Fracassi, Simone Traverso, Stefan Heun +3

Nonreciprocal dissipationless transport has long been sought for applications in superconducting technologies. Recently, it has been implemented by the so called superconducting di…

cond-mat.mes-hall2025

Impact of hydrogenation on the structure, chemistry, and electrical properties of flame-synthesized carbon nanoparticle films

Luca Basta, Francesca Picca, Pegah Darvehi +8

The interaction between hydrogen atoms and carbon nanoparticles is a fundamental process governing the properties of carbonaceous materials in environments ranging from combustion…

cond-mat.supr-con2025★ 1 cited

Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy

Antonio Lombardi, Gaurav Shukla, Giada Bucci +10

InSb nanoflags represent an interesting platform for quantum transport and have recently been exploited in the study of hybrid planar Josephson junctions. Due to the uncovered semi…

cond-mat.mes-hall2025★ 8 cited

Superconducting Quantum Interference Devices based on InSb nanoflag Josephson junctions

Andrea Chieppa, Gaurav Shukla, Simone Traverso +10

Planar Josephson junctions (JJs) based on InSb nanoflags have recently emerged as an intriguing platform in superconducting electronics. This letter presents the fabrication and in…

cond-mat.mes-hall2025★ 1 cited

Quasi--periodic supercurrent at quantum Hall transitions

Ivan Villani, Matteo Carrega, Alessandro Crippa +9

The combination of superconductivity and quantum Hall (QH) effect is regarded as a key milestone in advancing topological quantum computation in solid-state systems. Recent quantum…

cond-mat.mes-hall2025★ 2 cited

Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers

Giulio Senesi, Katarzyna Skibinska, Alessandro Paghi +5

Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Ferm…