44 citations · 57 across the 9 of their papers we have counts for
9 papers
Direct observation of flat bands in near-magic-angle twisted bilayer CVD graphene
Gianluigi Baiardi, Alex Boschi, Giulia Piccinini +13
Advances in chemical vapor deposition (CVD) growth have driven graphene crystal quality to unprecedented levels, yet it is still unknown whether this route can realize the fragile…
Emission dynamics in zincblende InAsxP1-x quantum dots in InP nanowires: influence of quantum dot size, composition and nanowire geometry
Tomasz Gzyl, Giada Bucci, Krzysztof Gawarecki +10
Hereby, we present an experimental and theoretical investigation of emission dynamics in zincblende InAsxP1-x quantum dots (QDs) embedded in InP nanowires (NWs) grown via vapour-li…
Growth and Transport Properties of InAsSb Nanoflags
Sebastian Serra, Gaurav Shukla, Giada Bucci +5
The present work reports, for the first time, the growth of high-quality free-standing InAsSb nanoflags and their electronic properties. Different growth conditions have been explo…
Phonon interference effects in GaAs-GaP superlattice nanowires
Chaitanya Arya, Johannes Trautvetter, Jose M. Sojo-Gordillo +8
Fine-tuning the functional properties of nanomaterials is crucial for technological applications. Superlattices, characterized by periodic repetitions of two or more materials in d…
Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy
Antonio Lombardi, Gaurav Shukla, Giada Bucci +10
InSb nanoflags represent an interesting platform for quantum transport and have recently been exploited in the study of hybrid planar Josephson junctions. Due to the uncovered semi…
Superconducting Quantum Interference Devices based on InSb nanoflag Josephson junctions
Andrea Chieppa, Gaurav Shukla, Simone Traverso +10
Planar Josephson junctions (JJs) based on InSb nanoflags have recently emerged as an intriguing platform in superconducting electronics. This letter presents the fabrication and in…
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers
Giulio Senesi, Katarzyna Skibinska, Alessandro Paghi +5
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Ferm…
Engineering nanowire quantum dots with iontronics
Domenic Prete, Valeria Demontis, Valentina Zannier +3
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are g…
InAs nanowire hot-electron Josephson transistor
S. Roddaro, A. Pescaglini, D. Ercolani +3
At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and c…