most citedStructural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers

2 citations · 2 across the 1 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2026

Growth and Transport Properties of InAsSb Nanoflags

Sebastian Serra, Gaurav Shukla, Giada Bucci +5

The present work reports, for the first time, the growth of high-quality free-standing InAsSb nanoflags and their electronic properties. Different growth conditions have been explo…

cond-mat.mes-hall2025

Phonon interference effects in GaAs-GaP superlattice nanowires

Chaitanya Arya, Johannes Trautvetter, Jose M. Sojo-Gordillo +8

Fine-tuning the functional properties of nanomaterials is crucial for technological applications. Superlattices, characterized by periodic repetitions of two or more materials in d…

cond-mat.supr-con2025

Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy

Antonio Lombardi, Gaurav Shukla, Giada Bucci +10

InSb nanoflags represent an interesting platform for quantum transport and have recently been exploited in the study of hybrid planar Josephson junctions. Due to the uncovered semi…

cond-mat.mes-hall2025

Superconducting Quantum Interference Devices based on InSb nanoflag Josephson junctions

Andrea Chieppa, Gaurav Shukla, Simone Traverso +10

Planar Josephson junctions (JJs) based on InSb nanoflags have recently emerged as an intriguing platform in superconducting electronics. This letter presents the fabrication and in…

cond-mat.mes-hall20252 cited

Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers

Giulio Senesi, Katarzyna Skibinska, Alessandro Paghi +5

Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Ferm…