Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers

Giulio Senesi, Katarzyna Skibinska, Alessandro Paghi +5

Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Ferm…